Recently, the team of Associate Professor Li Qiang, School of Electronics, Faculty of Telecommunications, Xi'an Jiaotong University, based on the previous successful preparation of BAlN films doped with different Al components, prepared a hBN/B1-xAlxN heterojunction and systematically studied its electrical properties.
By adjusting the aluminum components in B1-xAlxN, the h-BN/B0.89Al0.11N structure was optimized. The research shows that the structure has high lattice matching, low formation energy, and excellent heterojunction rectification characteristics.
It is understood that hexagonal boron nitride (hBN) material, as an emerging graphene-like ultra-wide bandgap semiconductor, has a two-dimensional layered structure without dangling bonds. This feature makes it have great potential as a functional substrate and other materials to form heterostructures. The research on hBN heterostructures also expands the application of hBN materials in the field of deep ultraviolet optoelectronics.
So far, devices that emit deep ultraviolet rays mainly use components made of mercury or aluminum gallium nitride, but these traditional components have problems with pollution or luminous efficiency. Therefore, many research teams have begun to seek other ways to solve these problems. For example, the University of Michigan in the United States and Pohang University of Science and Technology in South Korea have made progress in graphene hBN.
